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  preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. august 2009 doc id 15593 rev 2 1/9 9 stGW45HF60WD 45 a, 600 v ultra fast igbt features improved e off at elevated temperature low c res / c ies ratio (no cross-conduction susceptibility) ultra fast soft recovery antiparallel diode applications welding high frequency converters power factor correction description the "hf" series is based on a new planar technology concept to yield an igbt with tighter variation of switching energy (e off ) versus temperature. suffix "w" denotes a subset of products tailored to high switching frequency operation over 100 khz. figure 1. internal schematic diagram to-247 1 2 3 table 1. device summary order code marking package packaging stGW45HF60WD GW45HF60WD to-247 tube www.st.com
electrical ratings stGW45HF60WD 2/9 doc id 15593 rev 2 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c (1) 1. calculated according to the iterative formula: continuous collector current at t c = 25 c 70 a i c (1) continuous collector current at t c = 100 c 45 a i cp (2) 2. pulse width limited by maximum junction temperature and turn-off within rbsoa collector current (pulsed) tbd a i cl (3) 3. v clamp = 80% (v ces ), v ge = 15 v, r g = 10 ? , t j = 150 c turn-off latching current tbd a v ge gate-emitter voltage 20 v i f diode rms forward current at t c = 25 c 30 a i fsm surge not repetitive forward current t p = 10 ms sinusoidal 120 a p tot total dissipation at t c = 25 c 250 w t stg storage temperature ? 55 to 150 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case igbt 0.5 c/w thermal resistance junction-case diode 1.5 c/w r thj-amb thermal resistance junction-ambient 50 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ---------------------------------------------------------------------------------------------------------- =
stGW45HF60WD electrical characteristics doc id 15593 rev 2 3/9 2 electrical characteristics (t j = 25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 30 a v ge = 15v, i c = 30 a, t j = 125 c 1.9 tbd 2.5 v v v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 3.75 5.75 v i ces collector cut-off current (v ge = 0) v ce = 600 v v ce = 600 v, t j = 125 c 500 5 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 100 na g fs forward transconductance v ce = 15 v , i c = 30 a tbd s table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - tbd tbd tbd - pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 390 v, i c = 30 a, v ge = 15 v, figure 3 - tbd tbd tbd - nc nc nc
electrical characteristics stGW45HF60WD 4/9 doc id 15593 rev 2 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 30 a r g = 4.7 ? , v ge = 15 v, figure 2 - tbd tbd tbd - ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 30 a r g = 4.7 ? , v ge = 15 v, t j = 125 c figure 2 - tbd tbd tbd - ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 30 a, r ge = 4.7 ? , v ge = 15 v figure 2 - tbd tbd tbd - ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 30 a, r ge = 4.7 ? , v ge =15 v, t j = 125 c figure 2 - tbd tbd tbd - ns ns ns table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit e on (1) e off e ts 1. eon is the tun-on losses when a typica l diode is used in the test circuit in figure 4 . if the igbt is offered in a package with a co-pak diode, the co-pack diode is used as external diode. igbts & diode are at the same temperature (25 c and 125 c). eon include diode recovery energy. turn-on switching losses turn-off switching losses total switching losses v cc = 390 v, i c = 30 a r g =4.7 ? , v ge = 15 v, figure 4 - 300 330 630 j j j e on (1) e off e ts turn-on switching losses turn-off switching losses total switching losses v cc = 390 v, i c = 30 a r g =4.7 ? , v ge = 15 v, t j = 125 c figure 4 - 550 550 1100 800 j j j table 8. collector-emitter diode symbol parameter test cond itions min. typ. max. unit v f forward on-voltage i f = 30 a i f = 30 a, t j = 125 c - 1.6 1.4 - v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 30 a,v r = 50 v, di/dt = 100 a/ s (see figure 5) - 45 56 2.55 - ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 30 a,v r = 50 v, di/dt = 100 a/ s t j =125 c, (see figure 5) - 100 290 5.8 - ns nc a
stGW45HF60WD test circuits doc id 15593 rev 2 5/9 3 test circuits figure 2. test circuit for inductive load switching figure 3. gate charge test circuit figure 4. switching waveform figure 5. diode recovery time waveform am01504v1 am01505v1 am01506v1 90 % 10 % 90 % 10 % v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcro ss 90 % 10 % am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f di/dt
package mechanical data stGW45HF60WD 6/9 doc id 15593 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stGW45HF60WD package mechanical data doc id 15593 rev 2 7/9 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
revision history stGW45HF60WD 8/9 doc id 15593 rev 2 5 revision history table 9. document revision history date revision changes 16-apr-2009 1 initial release. 04-aug-2009 2 ? modified i c value on test conditions table 4 ? modified r g value on test conditions table 6 and table 7
stGW45HF60WD doc id 15593 rev 2 9/9 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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